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Grace Scientific Corporation

GSC-PE-225 - Hall Effect In Semiconductor: Determination Of Mobility, Hall Coefficient

GSC-PE-225 - Hall Effect In Semiconductor: Determination Of Mobility, Hall Coefficient

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Laboratory Setup – Hall Effect in Semiconductor (Determination of Mobility and Hall Coefficient)

General Description

A laboratory training setup designed to study the Hall effect in semiconductors, enabling determination

of mobility and Hall coefficient. The setup is suitable for classroom and laboratory use, with durable

construction and clear labeling.

General Requirements

§ Hall probes, Gauss and Tesla meter, measuring unit, temperature sensor, constant current

source, and electromagnet

§P-type germanium crystal with oven
§In As sensor for magnetic field measurement
§Constant current source with LCD display

Technical Specifications

Gauss and Tesla Meter

§Microcontroller-based LCD display for Gauss and Tesla measurements
§Measurement range: 0–20 kG
§Sensor: In As type, high sensitivity
§Direction indication of magnetic field
§PC interface: RS232 or USB
§Mains supply: 230 V AC ±10%, 50 Hz

Measurement Unit

§Probe current: Max 18–20 mA
§Heater current: Adjustable 0–700 mA
§Operating temperature: 0–100 °C
§Hall voltage: Max 200 mV
§PC interface: RS232 and USB
§Mains supply: 230 V AC ±10%, 50 Hz
§Hall Probe
§Crystal: P-type lightly doped
§Resistivity: As per probe specification
§Thickness: As per probe specification
§Temperature Sensor
§Type: PT 100
§Constant Current Power Supply
§Current range: 0–3.5 A
§Output voltage: 18–20 V
§Display: LCD, 16 × 2 characters
§Mains supply: 230 V AC ±10%, 50 Hz
ØElectromagnet
§Pole diameter: 20–25 mm
§ Coils: 2 nos.
§Resistance: ~5 Ω
§Input current: 3.5 A at 20 V
§Weight: ~16 kg

Functional Capabilities

§Measurement of magnetic field using Gauss and Tesla meter
§Determination of electromagnet poles with Hall probe and Gauss meter
§Measurement of Hall voltage
§Calculation of charge carrier concentration density of semiconductor crystal
§Calculation of Hall coefficient of Ge p-type crystal
§Calculation of mobility of charge carrier particles
§Study of Hall voltage vs current at constant magnetic field
§Study of Hall coefficient vs temperature
§Study of Hall voltage vs magnetic field at constant current

Additional Requirements

§Compact, durable enclosure with safety features
§Clear labeling of all terminals and controls
§Supplied with instruction manual including circuit diagrams and experiment procedures
§Suitable for repeated laboratory use
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